Department of electrical engineering and computer science. The power losses, the switching times and the efforts for the driving circuits are investigated. But this will increase the size of the device so fabs give a minimum space to put a tap, for example, 10. More specifically it is the inadvertent creation of a lowimpedance path between the power supply rails of a mosfet circuit. Insulated gate bipolar transistor igbt basics abdus sattar, ixys corporation 1 ixan0063. Located in stoughton, ma, we are committed to delivering innovative. The bootstrap circuit is useful in a highvoltage gate driver and operates as follows. The physical operation of these devices combines both that of a cmos mosfet and that of a bipolar transistor.
When a latchup is detected, the lpt circuit shuts down the chip and holds it powereddown for a preset time. The rb resistor signifies the shorting of the baseemitter terminals of the npn transistor to ensure that the thyristor doesnt latch up, that will lead to the igbt latch up. Home knowledge white papers fourthgeneration field stop igbt with highperformance and enhanced latch up immunity. Pdf latchup failure is one of the most important failure. In particular, for the dynamic latch up characteristics shown in figure 6, the proposed fs igbt. A systematic methodology is developed in order to clarify the punch through trench insulated gate bipolar transistor t igbt failure mechanisms which can occur under extreme operating conditions such as short circuit and clamped inductive switching. If this rb is not adequately reduced, dynamic latching could occur at turnoff. Dynamic latchup in advanced ligbt structures at high. A possibility for a latchup mitigation is the latchup protection technology circuit.
Latchup is the low resistance connection between tub clarification needed and power supply rails. The first circuit shows an nchannel power mosfet driving a wide base pnp. Latchup of parasitic thyristor in igbt insulated gate. The igbt can switch at moderately high frequency igbt module wear out failure mechanisms, such as bond wire fatigue, aluminum reconstruction, substrate cracking, interconnections corrosion, and solder fatigue and voids, while igbt catastrophic failure is not discussed in detail except for the mechanism of latch up. Galvanic isolated gate driver infineon technologies. Analysis of the dynamic characteristics of a power semiconductor module. Insulated gate bipolar transistor igbt basics ixys corporation. Power electronics systems are commonly used in motor drive, power supply and power conversion. Enhanced level of protection is provided by implemented shortcircuit monitoring. Opencircuit can also be due to absence of gate drive signal. A fast overcurrent protection scheme for igbt modules through dynamic fault current evaluation zhiqiang wang1, xiaojie shi1, leon m. Turnoff time as a precursor for gate bipolar transistor latchup. A latchup is a type of short circuit which can occur in an integrated circuit ic.
This is dynamic latchup, which is actually what limits the safe operating area. All the explanation images have 2 mosfets next to each other and the latchup comes from their interaction through the substrate. The term igbt is a semiconductor device and the acronym of the igbt is insulated gate bipolar transistor. Driver cores from the skhi and skyper family can be optimized using adapter boards for each module type. Consider the igbt embedded in a stepdown converter circuit. Closedloop igbt gate drive featuring highly dynamic dldt. The latch up immunity was evaluated under static and dynamic conditions, as shown in figures 5 and 6 respectively. How to reduce body spreading resistance in the igbt. The designers of the igbt think that it is a voltage controlled bipolar. Simple circuit techniques and attention to system design details will ensure that the cmos full potential can be realized in all operating environments. An6076 design and application guide of bootstrap circuit for high.
Aalborg universitet catastrophic failure and fault. Advanced soi gate driver ic with integrated v monitoring. Although designed for driving discrete and module igbts, this device offers a. How the igbt insulated gate bipolar transistor latch up. Plugandplay drivers plugandplay products are complete, readytouse igbt drivers that have been tightlymatched to a specific igbt module.
Dynamic switching test technology for igbt chip under high power operating condition. Dynamic avalanche behavior of power mosfets and igbts under unclamped inductive switching conditions. The igbt as an optimal candidate as a power switch for applications requires high current, high voltage and high temperature operation 1, nevertheless, one of the most important drawbacks of igbts is the latch up to the inherent parasitic thyristor structure, which leads to the gate control loss of the collector current and failure caused by. By considering a 2d dimensional physically based device simulation, and by analyzing. A step by step methodology to analyze the igbt failure. Low driving power and a simple drive circuit due to the input mos gate structure. A fast overcurrent protection scheme for igbt modules.
Mc33153 single igbt gate driver the mc33153 is specifically designed as an igbt driver for high power applications that include ac induction motor control, brushless dc motor control and uninterruptable power supplies. How the dynamic latch up of the parasitic thyristor in the igbt avoided. This paper describes the design and implementation of a driver that allows an igbt module rated at 800 a3300 v to switch up to 3000 a at 2200 v in. How advanced igbt gate drivers simplify highvoltage, high. The pwm source outputs a low signal to the inverter, which turns on the mosfet. Failure rate is calculated by multiplying a base failure rate with several conditional factors. This is dynamic latchup, which is actually what limits the safe. Igbt module wear out failure mechanisms, such as bond wire fatigue, aluminum reconstruction, substrate cracking, interconnections corrosion, and solder fatigue and voids, while igbt catastrophic failure is not discussed in detail except for the mechanism of latch up. Unfortunately, under dynamic conditions when the igbt is switching from on to off, it may latch up at drain current values less than the static current value. Fourthgeneration field stop igbt with highperformance and enhanced latch up immunity. Drivers such as the skyper prime offer a fully qualified. No formula was provided for igbt, therefore a mosfet and bipolar junction transistor bjt was modeled in series to represent an igbt.
Analog devices small form factor isolated gate drivers are designed for the higher switching speeds and system size constraints required by power switch technologies such as sic silicon carbide and gan gallium nitride, while still providing reliable control over switching characteristics for igbt insulated gate bipolar transistor and mosfet. In this sense, the non latch up igbt proposed by hans w. More specifically it is the inadvertent creation of a lowimpedance path between the. A latch up is a type of short circuit which can occur in an integrated circuit ic. Galvanic isolated gate driver ics for mosfets, igbts, igbt modules, sic mosfets and gan hemts perfect for industrial and automotive applications. These gate charge dynamic input characteristics show the electric load necessary to. In a previous study, we have argued that the modified structure shows a superior static latch up performance at high operating temperatures.
But this will increase the size of the device so fabs give a minimum space to put a tap. Closedloop igbt gate drive featuring highly dynamic dldt and dvdt control y. The latchup tj is not always 255c due to difference in current. Igbt fwdpower bridges and fully integrated gate drivers with driving and monitoring functions replacing conventional hybrid igbt drivers are restricted to low power applications 600v, 1200v. Dynamic latch up is associated with a high dvdt at turnoff. Semikron offers two different igbt driver families for any application. Igbts have a higher gain than do mosfets, resulting in more shortcircuit current for a given gate voltage. The body spreading resistance in the igbt is reduced by making body region heavily doped. The gate driver features optical interfaces and a builtin dcdc power supply with basic isolation. Since an igbt has a mos gate structure, to charge and discharge this gate when switching, it is.
Non latch up igbt operation was ensured, for the first time, for the entire device operation range. An igbt is more prone to latch up because it has a fourlayer structure, and this may also restrict the device safe operating area. Pdf dynamic avalanche behavior of power mosfets and. Internal or personal use of this material is permitted. In the first faulttolerant motor drive reported by janhs.
Igbt improves dynamic performance and efficiency and reduced the. Analysis of the latchup process and current filamentation. Kolar this material is published in order to provide access to research results of the power electronic systems laboratory ditet eth zurich. Is it possible to have latchup in a single mosfet package. Infineon provides a broad spectrum of solutions for reliable and efficient controls. With a range spanning from single to halfbridge and multiplechannel drivers rated for either low or highvoltage up to 1500 v applications, st also offers galvanicallyisolated gate driver ics for safety and functional requirements, systeminpackage sip solutions integrating high and lowside gate drivers and mosfetbased power stages. This is actually what limits the soa of an igbt since the dynamic latch up current is lower than the static one mosfet section turns off and the depletion region of junction bodydrift expands into n layer, the base region of the pnp bjt. Catastrophic failure and fault9tolerant design of igbt power. It consists of three terminals with a vast range of bipolar current carrying capacity. Latching overview levelsensitive design dynamic latches l faster l less area l required to function at 110th speed general purpose library l fully characterized l emphasis on speed 1996 vlsi circuits workshop dynamic logic and latches part ii latching latch implementation i. Igbts are the ideal choice with switching frequencies of 1khz150khz and current handling of up to.
Igbt gate driver solutions for low and medium power applications 18 igbt drivers. Insulated gate bipolar transistor igbt interview question answer 2 1. Adding the parameter lambda50m or there abouts to the vdmos model would add. To develop the medium power market for currents up to 100a or even higher the extension of the gate driver ic performance is necessary. Pdf sem investigation on igbt latchup failure researchgate. To avoid dynamic latch up, to be discussed later the gate emitter voltage of an igbt is maintained at a negative value when the device. Drivers are available to cover a large selection of highpower and high voltage igbt modules with reverse voltages from 600 v to 6500 v. White paper fourthgeneration field stop igbt with high. Driving insulated gate bipolar transistors igbt s micropower direct mpd, a leading worldwide provider of power conversion products, was founded by a group of industry veterans in 1999. Robust design with major power discrete technologies.
Primary failure modes associated with igbt latchup faults are. It is equally suitable in resonantmode converter circuits. Our integrated circuits, igbt drivers, and diodes enable compact, energyefficient acdc power supplies for a vast range of electronic products including mobile devices, tvs, pcs, appliances, led lights, smart utility meters, traction motors, dc. On semiconductor amplia lofferta di igbt e gate driver. Failure mechanisms of insulated gate bipolar transistors. When the igbt is switched off, the depletion layer of the ndrift p body junction j2 is abruptly extended, and the igbt latches up at a current lower than 12 of the static latch up current due to the displacement current.
Due to the feedback effect of the emitter stray inductance. Application note an983 igbt characteristics table of contents. Dynamic avalanche can be selfinduced if the gate resistance is too low. Figure 5 shows that the maximum static saturation current is around 4000acm2 with no latch up occurring. Latchup protection for mosfet drivers microchip technology inc. Insulated gate bipolar transistors igbts are a difficult problem for tcad engineers.
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